Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-01-24
2010-10-19
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21646, C427S255360
Reexamination Certificate
active
07816282
ABSTRACT:
A method is used for forming an SrTiO3film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
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Feil et al. “Organometallic chemical vapor deposition of strontium titanate”, Journal of Applied Physics, vol. 67, No. 8, Apr. 15, 1990 p. 3858.
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Higashi Shintaro
Kadokura Hidekimi
Kakimoto Akinobu
Kawano Yumiko
Coleman W. David
McCall-Shepard Sonya D
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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