Method for forming SrTiO 3 film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21646, C427S255360

Reexamination Certificate

active

07816282

ABSTRACT:
A method is used for forming an SrTiO3film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

REFERENCES:
patent: 5006363 (1991-04-01), Fujii et al.
patent: 7108747 (2006-09-01), Leskelä et al.
patent: 7-249616 (1995-09-01), None
Feil et al. “Organometallic chemical vapor deposition of strontium titanate”, Journal of Applied Physics, vol. 67, No. 8, Apr. 15, 1990 p. 3858.
Chemically Conformal ALD of SrTiO3Thin Films Using Conventional Metallorganic Precursors; Oh Seong Kwon, et al.: Journal of the Electrochemical Society, 152 (4) C229-C236 (2005).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming SrTiO 3 film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming SrTiO 3 film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming SrTiO 3 film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4221622

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.