Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2007-11-27
Ha, Nathan W. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
10911672
ABSTRACT:
A solder bump structure may be formed using a dual exposure technique of a photoresist, which may be a positive photoresist. The positive photoresist may be coated on an IC chip. First openings may be formed at first exposed regions of the photoresist by a first exposure process. Metal projections may be formed in the first openings. A second opening may be formed at a second exposed region of the photoresist by a second exposure process. The second exposed region may include non-exposed regions defined by the first exposure process. A solder material may fill the second opening and may be reflowed to form a solder bump. The metal projections may be embedded within the solder bump.
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Korean Office Action dated Jun. 30, 2005.
Jang Dong-Hyeon
Jeong Se-Young
Kim Gu-Sung
Ma Keum-Hee
Ha Nathan W.
Harness & Dickey & Pierce P.L.C.
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