Method for forming solder balls with a stable oxide layer by...

Details Method for forming solder balls with a stable oxide layer by... Method for forming solder balls with a stable oxide layer by...

2006-09-13

2010-11-09

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000

Reexamination Certificate

active

07829453

ABSTRACT:
By controlling the cooling rate during the oxidation process for forming an oxide layer on solder balls and by selecting an elevated temperature as an initial temperature of the oxidation process, a reliable yet easily removable oxide layer may be obtained. Consequently, yield losses during the flip chip assembly process may be significantly reduced.

REFERENCES:
patent: 5137845 (1992-08-01), Lochon et al.
patent: 6179198 (2001-01-01), Eifuku et al.
patent: 6219910 (2001-04-01), Murali
patent: 6336262 (2002-01-01), Dalal et al.
patent: 2 368 629 (2002-05-01), None

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