Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-12
2009-12-29
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S154000, C438S161000, C438S311000, C438S620000, C257S347000, C257S349000, C257SE27112
Reexamination Certificate
active
07638376
ABSTRACT:
A method for forming a substrate contact on a silicon-on-insulator (SOI) wafer is provided that can be integrated with a process for fabricating SOI devices without additional processing after wafer dicing. The method is applicable in many of the more advanced packaging technologies, e.g., such as flip chip and die stacking, directly creating a contact to silicon substrate via the front of the diced SOI wafer.
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Chen Hao-Yu
Huang Chien-Chao
Tsao Hsun-Chih
Wen Cheng-Kuo
Yang Fu-Liang
Birch & Stewart Kolasch & Birch, LLP
Parker John M
Smith Matthew
Taiwan Semiconductor Manufacturing Co. Ltd.
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