Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-08-19

2009-11-24

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S771000, C438S773000, C257SE21033

Reexamination Certificate

active

07622338

ABSTRACT:
The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover, the present invention provides a method for manufacturing a semiconductor device which can reduce the cost with a small number of materials and with high yield. According to the present invention, after a semiconductor film is partially oxidized to form an oxide layer, the semiconductor film is etched using the oxide layer as a mask to form a semiconductor region having a desired shape, and thereafter a semiconductor device using the semiconductor region is manufactured. Thus, a semiconductor region having a desired shape can be formed in a predetermined position without using a known photolithography step using a resist.

REFERENCES:
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4690729 (1987-09-01), Douglas
patent: 4769750 (1988-09-01), Matsumoto et al.
patent: 5530265 (1996-06-01), Takemura
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6326221 (2001-12-01), Lee et al.
patent: 6378995 (2002-04-01), Yun et al.
patent: 6416583 (2002-07-01), Kitano et al.
patent: 6541315 (2003-04-01), Yamazaki et al.
patent: 6551867 (2003-04-01), Ozeki et al.
patent: 6627263 (2003-09-01), Kitano et al.
patent: 6764967 (2004-07-01), Pai et al.
patent: 6830856 (2004-12-01), Tsai et al.
patent: 6833327 (2004-12-01), Ishikawa
patent: 6847084 (2005-01-01), Ono et al.
patent: 6849825 (2005-02-01), Tanaka
patent: 7247529 (2007-07-01), Shoji et al.
patent: 2002/0136829 (2002-09-01), Kitano et al.
patent: 2002/0187594 (2002-12-01), Yamazaki et al.
patent: 2004/0151994 (2004-08-01), Tsai et al.
patent: 2004/0222197 (2004-11-01), Hiramatsu
patent: 2004/0224446 (2004-11-01), Yeh
patent: 2005/0196711 (2005-09-01), Shiroguchi et al.
patent: 2005/0211680 (2005-09-01), Li et al.
patent: 2005/0226287 (2005-10-01), Shah et al.
patent: 2005/0276912 (2005-12-01), Yamamoto et al.
patent: 2006/0038174 (2006-02-01), Maekawa
patent: 2006/0046512 (2006-03-01), Nakamura et al.
patent: 2006/0211187 (2006-09-01), Choi et al.
patent: 60-249312 (1985-12-01), None
patent: 63-051641 (1988-03-01), None
patent: 03-024717 (1991-02-01), None
patent: 06-244184 (1994-09-01), None
patent: 08-288518 (1996-11-01), None
patent: 2000-188251 (2000-07-01), None
Office Action (Application No. 200510103678.3) Dated Mar. 28, 2008.
Office Action (Application No. 200510103678.3) Dated Sep. 19, 2008.
Mullenborn et al., “Laser Direct Writing of Oxide Structures on Hydrogen-Passivated Silicon Surfaces,” Applied Physics Letters; vol. 69, No. 20, pp. 3013-3015, Nov. 11, 1996.
Office Action (Application No. 200510103678.3) Dated Apr. 10, 2009.

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