Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-31
2005-05-31
Chaudhuri, Olik (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S261000, C438S981000, C438S275000, C257S318000
Reexamination Certificate
active
06900097
ABSTRACT:
First of all, a semiconductor substrate is provided, and then a first/second wells with a first conductivity are formed therein so as to individually form a first part of the floating gate of single-level EEPROM and a low-voltage device thereon, wherein the first and the second wells are used to separate the high-voltage device, and the depth of the first well is the same as the second well. Furthermore, the high-voltage device and the second part of the floating gate of single-level EEPROM are individually formed on the semiconductor substrate between the first and the second wells, and the control gate of the floating gate of single-level EEPROM is formed in the third well located under the second part of the floating gate of single-level EEPROM, wherein the high-voltage device can be operated in the opposite electric field about 18V, such as −6V˜12V, −12V˜6V, −9V˜9V etc.
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Chen Rong-Ching
Huang Ching-Chun
Lin Jy-Hwang
Chaudhuri Olik
Luhrs Michael K.
Nath & Associates PLLC
Novick Harold L.
United Microelectronics Corp.
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