Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-14
2010-10-05
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C257SE21043
Reexamination Certificate
active
07807537
ABSTRACT:
After forming a silicon nitride film14on a silicon oxide film12covering one main surface of a semiconductor substrate10by a CVD method, argon ions Ar+are doped to a part (where oxidation speed should be reduced) of the silicon nitride film14by an ion doping process using a resist layer as a mask in a condition of acceleration voltage at 100 keV and a dose amount of 5×1015inos/cm2. Thereafter, by performing a thermal oxidation process to the silicon nitride film14, a thin silicon oxide film18ais formed in a non-ion doped part and a thick silicon oxide film18bis formed in an ion doped part. This method for forming silicon oxide films can be applied to a method for manufacturing capacitors of a MOS type IC, etc. Moreover, a silicon oxynitride film can be used instead of the silicon nitride film.
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Harada Yoshiko
Ogura Naotada
Dickstein & Shapiro LLP
Parker John M
Smith Matthew
Yamaha Corporation
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