Method for forming silicon dioxide film using siloxane

Details Method for forming silicon dioxide film using siloxane Method for forming silicon dioxide film using siloxane

2006-08-01

2006-08-01

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000

Reexamination Certificate

active

07084076

ABSTRACT:
A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

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Klaus, J.W., et al., “Atomic layer controlled growth of SIO2films using binary reaction sequence chemistry,” American Institute of Physics, 1997, pp. 1092-1094.

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