Method for forming silicon-containing insulation film having...

Details Method for forming silicon-containing insulation film having... Method for forming silicon-containing insulation film having...

2006-12-12

2006-12-12

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S578000, C427S579000

Reexamination Certificate

active

07147900

ABSTRACT:
A silicon-containing insulation film is formed on a substrate by plasma reaction using a reaction gas including (i) a source gas comprising a silicon-containing hydrocarbon compound containing multiple cross-linkable groups, (ii) a cross-linking gas, and (iii) an inert gas, into a reaction chamber where a substrate is placed. The insulation film is then exposed to electron beam radiation, thereby increasing mechanical strength of the film without substantial alternation of its dielectric constant.

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