Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-14
2010-02-16
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S581000, C438S651000, C257SE21438, C257SE21439
Reexamination Certificate
active
07662716
ABSTRACT:
Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.
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W. R. Runyan, et al. “Semiconductor Integrated Circuit Processing Technology” Copyright © 1990 by Addison-Wesley Publishing Company, Inc. 6 pages.
Badih El-Kareh “Fundamentals of Semiconductor Processing Technology” Copyright © 1995 by Kluwer Academic Publishers, 14pages.
Kim Hyun-Su
Lee Eun-Ok
Lee Ho-ki
Lee Sang-Woo
Moon Kwang-Jin
Ghyka Alexander G
Muir Patent Consulting, PLLC
Nikmanesh Seahvosh J
Samsung Electronics Co,. Ltd.
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