Method for forming silicide contacts

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S581000, C438S651000, C257SE21438, C257SE21439

Reexamination Certificate

active

07662716

ABSTRACT:
Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.

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patent: 6391750 (2002-05-01), Chen et al.
patent: 2005/0202664 (2005-09-01), Jawarani
patent: 2006/0046398 (2006-03-01), McDaniel et al.
patent: 2006/0121708 (2006-06-01), Lin et al.
patent: 2000-0050300 (2000-08-01), None
patent: 10-2001-0003579 (2001-01-01), None
patent: 10-2001-0039174 (2001-05-01), None
W. R. Runyan, et al. “Semiconductor Integrated Circuit Processing Technology” Copyright © 1990 by Addison-Wesley Publishing Company, Inc. 6 pages.
Badih El-Kareh “Fundamentals of Semiconductor Processing Technology” Copyright © 1995 by Kluwer Academic Publishers, 14pages.

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