Method for forming side contact in a semiconductor device

Details Method for forming side contact in a semiconductor device Method for forming side contact in a semiconductor device

1995-10-11

1999-01-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438635, 438648, H01L 214763

Patent

active

058638334

ABSTRACT:
A method of forming a side contact in a semiconductor device wherein a first insulating layer, first conductive and second insulating layer are formed over a substrate, and a contact hole through these layers exposes a portion of the substrate and a side edge of the first conductive layer. A refractory metal layer being formed in the contact hole, such that the natural oxide layer is changed into a conductive material by reaction with the refractory metal layer during a subsequent process step.

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