Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-10
2006-01-10
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S359000, C438S424000, C438S427000
Reexamination Certificate
active
06984553
ABSTRACT:
In a manufacturing method for a shallow trench isolation, first, a multi-layer structure is formed over a semiconductor substrate. A first trench is formed in the multi-layer structure to define an isolation region and an active region. Sidewalls in the first trench are formed by depositing sidewall material over the multi-layer structure and surfaces of the first trench and etching the sidewall material. An isolation trench is then formed in the substrate by etching the substrate using the sidewalls and the multi-layer structure as a mask. Then the sidewalls are etched back to expose a portion of the substrate surface. Thermal oxidation is performed to oxidize the second trench, wherein the etched sidewalls and the multi-layer structure protect the substrate underneath from being oxidized. Then, the oxidized second trench is filled with a filling material and the whole structure is polished. The amount by which the sidewalls are etched back controls a bird beak that is formed in the active region.
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Akin Gump Strauss Hauer & Feld & LLP
Brewster William M.
Macronix International Co. Ltd.
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