Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-13
2005-12-13
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S424000, C438S435000
Reexamination Certificate
active
06974741
ABSTRACT:
Disclosed is a method for forming a shallow trench. The method of the present invention comprises steps of providing a substrate; forming a plurality of operation layers on the substrate; forming photoresist on the uppermost one of the operation layers to define a position to be etched; etching a portion of the operation layers at said position to form an opening; forming a spacing layer on the sidewall of the opening; and etching a portion of the substrate corresponding to the opening to form a shallow trench. By the etching method of the present invention, a striation phenomenon caused by the common mask etch is avoided.
REFERENCES:
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 6143624 (2000-11-01), Kepler et al.
Chen Yi-Nan
Huang Tse-Yao
Lee Hsiu-Chun
Bacon & Thomas PLLC
Lee Hsien-Ming
NANYA Technology Corporatiion
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