Method for forming shallow junction for semiconductor device

Details Method for forming shallow junction for semiconductor device Method for forming shallow junction for semiconductor device

1996-11-12

1998-08-18

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438533, 438586, 438655, H01L 21336, H01L 21265

Patent

active

057958084

ABSTRACT:
A method for forming a shallow junction of a semiconductor device using a zirconium film to cover a semiconductor substrate and implanting impurities into the zirconium film. A titanium film is then formed over the zirconium film and both the zirconium and the titanium films are subjected to a thermal treatment to form a zirconium silicide and a titanium silicide. Unreacted parts of the zirconium film and titanium film are removed and the zirconium and titanium silicides are then subject to a second thermal treatment.

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Murarka, S., "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-792, Jul./Aug. 1980.
Wolf, S., et al., Silicon Processing, vol. 1, Lattice Press, 1986, pp. 384-399, 1986.

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