Method for forming semiconductor structure using modulation dope

Details Method for forming semiconductor structure using modulation dope Method for forming semiconductor structure using modulation dope

1995-12-29

1998-06-23

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437240, 437982, H01L 21316

Patent

active

057704694

ABSTRACT:
A method of fabricating a semiconductor structure utilizing doped silicate glass on a substrate of a wafer. The method includes the step forming a modulation doped silicate glass structure over a first layer of the wafer. The modulation doped silicate glass structure is formed by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over the first layer. Both the heavily-doped silicate glass and lightly-doped silicate glass layers may comprise glass doped with both a first dopant and a second dopant. The first dopant may represent, for example, phosphorous, and the second dopant may represent, for example, boron.

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