Method for forming semiconductor memory device

Details Method for forming semiconductor memory device Method for forming semiconductor memory device

1996-12-02

2000-11-07

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438257, 438267, 438263, H01L 21336

Patent

active

061436097

ABSTRACT:
A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating film is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.

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