Method for forming semiconductor electrical contacts using metal

Details Method for forming semiconductor electrical contacts using metal Method for forming semiconductor electrical contacts using metal

1992-09-25

1993-04-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437190, 437192, 437194, 437197, 228254, H01L 21283, H01L 2160, H01L 21603

Patent

active

052061868

ABSTRACT:
Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.

REFERENCES:
patent: 3599060 (1971-08-01), Triggs et al.
patent: 3840982 (1974-10-01), Schuster et al.
patent: 3848261 (1974-11-01), Romeo et al.
patent: 4263606 (1981-04-01), Yorikane
patent: 4750666 (1988-06-01), Neugebauer et al.
patent: 4907734 (1990-03-01), Conru et al.
patent: 5118370 (1992-06-01), Ozawa
patent: 5135890 (1982-08-01), Temple et al.
C. A. Neugebauer et al., "MCT Power Packaging", May 1990, Proceedings of the 40th IEEE ETCT, 2 pages.

Affiliated with

Also associated with

Rating

Method for forming semiconductor electrical contacts using metal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming semiconductor electrical contacts using metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming semiconductor electrical contacts using metal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2326851