Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-10
2010-02-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S270000, C438S362000, C438S576000
Reexamination Certificate
active
07666735
ABSTRACT:
A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.
REFERENCES:
patent: 2004/0248373 (2004-12-01), Park
patent: 2005/0145983 (2005-07-01), Bertin et al.
patent: 2005/0148154 (2005-07-01), Ogawa
patent: 2006/0258177 (2006-11-01), Kastenmeier et al.
Brown David E.
Meer Hans Van
Sun Sey-Ping
Advanced Micro Devices , Inc.
Le Dung A.
McDermott Will & Emery LLP
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