Method for forming semiconductor devices with active silicon...

Details Method for forming semiconductor devices with active silicon... Method for forming semiconductor devices with active silicon...

2011-08-23

2011-08-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S362000, C438S576000

Reexamination Certificate

active

08003459

ABSTRACT:
A method for forming different active thicknesses on the same silicon layer includes masking the silicon layer and exposing selected regions of the silicon layer. The thickness of the silicon layer at the exposed regions is changed, either by adding silicon or subtracting silicon from the layer at the exposed regions. Once the mask is removed, the silicon layer has regions of different active thicknesses, respectively suitable for use in different types of devices, such as diodes and transistors.

REFERENCES:
patent: 5985733 (1999-11-01), Koh et al.
patent: 2004/0087104 (2004-05-01), Barry et al.
patent: 2004/0248373 (2004-12-01), Park
patent: 2005/0145983 (2005-07-01), Bertin et al.
patent: 2005/0148154 (2005-07-01), Ogawa
patent: 2006/0258177 (2006-11-01), Kastenmeier et al.

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