Method for forming semiconductor devices having reduced gate...

Details Method for forming semiconductor devices having reduced gate... Method for forming semiconductor devices having reduced gate...

2005-07-06

2008-11-25

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S265000, C438S197000, C438S302000

Reexamination Certificate

active

07456115

ABSTRACT:
The present invention provides methods for forming semiconductor FET devices having reduced gate edge leakage current by using plasma or thermal nitridation and low-temperature plasma re-oxidation processes post gate etch.

REFERENCES:
patent: 5650344 (1997-07-01), Ito et al.
patent: 6518636 (2003-02-01), Segawa et al.
patent: 7268050 (2007-09-01), Jeong
patent: 2006/0134846 (2006-06-01), Wang
patent: 2007/0218605 (2007-09-01), Ozawa et al.

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