Method for forming semiconductor device with common gate, source

Details Method for forming semiconductor device with common gate, source Method for forming semiconductor device with common gate, source

1998-11-18

2000-07-25

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, 438682, 438592, 438303, H01L 21336

Patent

active

060936096

ABSTRACT:
A method has a feature that one side of the spacers surrounding a gate of a MOS transistor is removed and another side of the spacers is exposed. By the method of this invention, the gate, the source and the pick-up region of a well are electrically connected by a plug through a silicide layer covering them. Furthermore, the pick-up region is adjacent to the source such that the effective surface area can be reduced and the process has a higher error tolerance.

REFERENCES:
patent: 5073513 (1991-12-01), Lee
patent: 5219793 (1993-06-01), Cooper et al.
patent: 5681768 (1997-10-01), Smayling et al.
patent: 5895269 (1999-04-01), Wang et al.
patent: 5985707 (1999-11-01), Gil

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