Method for forming semiconductor device capable of...

Details Method for forming semiconductor device capable of... Method for forming semiconductor device capable of...

2007-05-08

2007-05-08

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S397000, C438S399000, C438S607000, C438S675000

Reexamination Certificate

active

11149297

ABSTRACT:
Disclosed is a method for preventing a bunker defect generation on a lower portion of a cylinder type metal bottom electrode. The method includes the steps of: forming an etch stop layer on a bottom structure with a conductive region and an insulation region; forming a capacitor insulation layer on the etch stop layer; forming an opening exposing the conductive region by selectively etching the capacitor insulation layer and the etch stop layer; growing a selective epitaxial growth (SEG) layer in the conductive region exposed through the opening; forming a metal layer for a capacitor bottom electrode along a profile provided with the opening; forming an isolated capacitor bottom electrode by removing the metal layer until the capacitor insulation layer is exposed; and removing the capacitor insulation layer, thereby making the capacitor bottom electrode have a cylinder type structure.

REFERENCES:
patent: 5909059 (1999-06-01), Hada et al.
patent: 6218272 (2001-04-01), Yeom et al.
patent: 7052983 (2006-05-01), Park et al.
patent: 2004/0063313 (2004-04-01), Shiratake et al.
patent: 2005/0035460 (2005-02-01), Tseng
patent: 2006/0006410 (2006-01-01), Lee et al.

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