Method for forming semiconductor device

Details Method for forming semiconductor device Method for forming semiconductor device

2007-06-29

2009-11-10

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S296000, C438S589000

Reexamination Certificate

active

07615451

ABSTRACT:
A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process margin reduction caused by a spacer oxide film formed on sidewalls of a recess and thickly laminated to a lower part of a recess. In one aspect, a buffer dielectric film pattern is formed additionally by a plasma enhanced chemical vapor deposition (PECVD) process over a hard mask pattern, so that a sufficient process margin used for forming the bulb-shaped portion is ensured and a process margin for forming a semiconductor device is increased.

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patent: 2006/0263991 (2006-11-01), Lee et al.
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patent: 2007/0148934 (2007-06-01), Cho et al.
patent: 10-2005-0011376 (2005-01-01), None
patent: 10-2006-0058959 (2006-06-01), None

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