Method for forming semiconductor device

Details Method for forming semiconductor device Method for forming semiconductor device

2009-06-11

2010-12-14

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S267000, C257S471000, C257SE21410

Reexamination Certificate

active

07851310

ABSTRACT:
A method for forming semiconductor device, which simultaneously forms a trench MOS transistor device, and an embedded schottky barrier diode (SBD) device in a semiconductor substrate. The embedded SBD device has lower forward voltage drop, which reduces power dissipation. In addition, the voltage bearing ability may be modified easily by virtue of altering the dopant concentration or the width of the voltage bearing dopant region, or the thickness of epitaxial silicon layer. Furthermore, extra cost of purchasing SBD diode may be saved.

REFERENCES:
patent: 2010/0176448 (2010-07-01), Hsieh
patent: 2010/0237414 (2010-09-01), Hsieh

Affiliated with

Also associated with

Rating

Method for forming semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4193932