Method for forming semiconductor device

Details Method for forming semiconductor device Method for forming semiconductor device

1996-10-24

1998-05-19

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

117 9, 117902, 117935, H01L 21336

Patent

active

057535558

ABSTRACT:
A method is provided for forming an epitaxial silicon layer on a diffused region of a silicon substrate having an anisotropic ratio of more than 3:1 between the growth rate in the direction perpendicular to the substrate surface and the growth rate in the direction parallel to the substrate surface. The epitaxial silicon layer serves as a contact plug which does not contact an adjacent contact plug formed by the same process in order to obtain a reliable semiconductor memory device with a high throughput, which is free from short circuit failure.

REFERENCES:
patent: 5124276 (1992-06-01), Samata et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5356830 (1994-10-01), Yoshikawa et al.
patent: 5393681 (1995-02-01), Witek et al.

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