Method for forming self aligned polysilicon contact

Details Method for forming self aligned polysilicon contact Method for forming self aligned polysilicon contact

1991-05-30

1999-03-09

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438672, H01L 21336

Patent

active

058799974

ABSTRACT:
A gate contact to a field effect transistor is opened over the source/drain region by forming polysilicon plugs between the gate structure, which has a nitride top layer, and the field oxide regions. The contacts are formed by oxidizing and etching the gate structure and the polysilicon plugs. An oxide layer may be deposited prior to the etching. The latter step opens a gate contact but does not expose the silicon in the plug because the different oxidation rates of the polysilicon plug and the material on top of the gate structure create oxide layers having different thicknesses. The nitride is now removed and contacts formed to the gate structure.

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IBM Technical Disclosure Bulletin, vol. 25, No. 3B, Aug., 1396-97, "Process for Simultaneously Making Silicide Gate, Source, Drain Electres", by H.J. Geipel, Jr., and S. Roberts.

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