Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-01
2009-11-17
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S635000, C438S682000, C438S762000, C438S769000, C438S770000, C257SE21438, C257SE21476, C257SE29156
Reexamination Certificate
active
07618891
ABSTRACT:
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.
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Fang Sunfei
Knarr Randolph F.
Krishnan Mahadevaiyer
Lavoie Christian
Mo Renee T.
International Business Machines - Corporation
Lebentritt Michael S
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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