Method for forming self-aligned metal silicide contacts

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S635000, C438S682000, C438S762000, C438S769000, C438S770000, C257SE21438, C257SE21476, C257SE29156

Reexamination Certificate

active

07618891

ABSTRACT:
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.

REFERENCES:
patent: 4345969 (1982-08-01), James et al.
patent: 4561907 (1985-12-01), Raicu
patent: 6531396 (2003-03-01), Chi et al.
patent: 6787864 (2004-09-01), Paton et al.
patent: 7015126 (2006-03-01), Wu et al.
patent: 7335606 (2008-02-01), Chi et al.
patent: 2002/0190028 (2002-12-01), Srivastava et al.
patent: 2004/0203229 (2004-10-01), Fang et al.
patent: 2005/0156210 (2005-07-01), Currie et al.
patent: 2005/0253204 (2005-11-01), Chan et al.
patent: 2006/0051961 (2006-03-01), Cabral, Jr. et al.
patent: 2009/0004850 (2009-01-01), Ganguli et al.

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