Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S180000, C438S188000
Reexamination Certificate
active
07101744
ABSTRACT:
A method for forming a self-aligned, dual silicon nitride liner for CMOS devices includes forming a first type nitride layer over a first polarity type device and a second polarity type device, and forming a topographic layer over the first type nitride layer. Portions of the first type nitride layer and the topographic layer over the second polarity type device are patterned and removed. A second type nitride layer is formed over the second polarity type device, and over remaining portions of the topographic layer over the first polarity type device so as to define a vertical pillar of second type nitride material along a sidewall of the topographic layer, the second type nitride layer in contact with a sidewall of the first type nitride layer. The topographic layer is removed and the vertical pillar is removed.
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Dyer Thomas W.
Yang Haining
Cantor & Colburn LLP
Cioffi James J.
Le Thao P.
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