Method for forming self-aligned contact window

Details Method for forming self-aligned contact window Method for forming self-aligned contact window

1998-04-13

2000-01-18

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438533, 438621, 438639, 438683, 438586, H01L 2144

Patent

active

060157410

ABSTRACT:
A method for forming a self-aligned contact window such that the method is compatible with the process of forming a self-aligned titanium silicide layer on the same device, and hence capable of miniaturizing device dimensions. Furthermore, this invention utilizes the thicker etching stop layer thickness above the gate region than above the source/drain region to protect the titanium silicide layer in the gate region against electrical contact with the self-aligned contact.

REFERENCES:
patent: 4855247 (1989-08-01), Ma et al.
patent: 5037777 (1991-08-01), Mele et al.
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5763311 (1998-06-01), Gardner et al.
patent: 5770507 (1998-06-01), Chen et al.
patent: 5783475 (1998-07-01), Ramaswami
patent: 5851890 (1998-12-01), Tsai et al.

Affiliated with

Also associated with

Rating

Method for forming self-aligned contact window does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming self-aligned contact window, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming self-aligned contact window will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562887