Method for forming resist patterns comprising two photoresist la

Details Method for forming resist patterns comprising two photoresist la Method for forming resist patterns comprising two photoresist la

1995-07-13

1998-11-03

Lesmes, George F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430324, 430314, 430325, 430326, 430394, 430513, G03C 500, G03C 1825

Patent

active

058306242

ABSTRACT:
A method for forming a resist pattern by coating a primary photoresist pattern having a small thickness and then coating a secondary photoresist pattern over the primary photoresist pattern. Alternatively, the resist pattern is formed by coating a primary photoresist film, exposing the primary photoresist film to light to define a light-exposed region in the primary photoresist film, coating a secondary photoresist film over the primary photoresist film, exposing the secondary photoresist film to light to define a light-exposed region in the secondary photoresist film, and developing the resulting structure to form primary and secondary resist patterns. The method achieves an improvement in the contrast of light, thereby obtaining a resist pattern having a vertical profile.

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patent: 5024919 (1991-06-01), Yamauchi
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patent: 5143820 (1992-09-01), Kotecha et al.
patent: 5275913 (1994-01-01), Lin
patent: 5304453 (1994-04-01), Lin

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