Method for forming resist patterns

Details Method for forming resist patterns Method for forming resist patterns

1994-12-13

1996-12-03

Chu, John S. Y.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430165, 430166, 430176, 430191, 430192, 430193, 4302701, 4302731, 430330, G03F 730, G03F 7023, G03F 7039

Patent

active

055807020

ABSTRACT:
Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
patent: 4837124 (1989-06-01), Wu et al.
patent: 5118582 (1992-06-01), Ueno et al.
patent: 5403695 (1995-04-01), Hayase et al.

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