Method for forming resist pattern

Details Method for forming resist pattern Method for forming resist pattern

2008-10-29

2011-12-27

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000

Reexamination Certificate

active

08084192

ABSTRACT:
A method for forming a resist pattern, includes forming a lower layer film, forming an intermediate film on the lower layer film, forming a photoresist film containing a photoacid-generating agent on the intermediate film, exposing the photoresist film, and developing the photoresist film. The lower layer film contains at least any one of a free acid, a thermoacid-generating agent, and a photoacid-generating agent, on a substrate to be treated.

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patent: 2008-39815 (2008-02-01), None
Ohiwa, “Reactive Ion Etching”, Microfabrication Technique of Next Generation, Toshiba Review, vol. 59, No. 8, pp. 22-25, (2004).
Notification of Reason(s) for Refusal issued by the Japanese Patent Office on Sep. 27, 2011, for Japanese Patent Application No. 2007-282375, and English-language translation thereof.

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