Method for forming resist pattern

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430 5, 430311, 430327, G03C 500

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053709756

ABSTRACT:
A phase shift mask having a phase shifter with an edge angle ranging from 70.degree. to 85.degree. or 95.degree. to 110.degree. is used as a reticle in forming a resist pattern so that the exposure pattern applied to the resist has a light intensity distribution with constant light intensity contrast. A fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly under constant developing conditions. In addition, there is provided on the side wall of the phase shifter of the phase shift mask a light shielding film which, due to its width, cannot be resolved as an exposure pattern itself. A region in which the light intensity is reduced from the constant level corresponding to the width of the light shielding film in the exposure pattern is formed by the projection lens. Therefore, a fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly using constant developing conditions. As a result, semiconductor devices with good performance can be manufactured with high yield.

REFERENCES:
patent: 4964726 (1990-10-01), Kleinknecht et al.
patent: 5153083 (1992-10-01), Garofalo et al.
Toh et al, "Optical Lithography With Chromeless Phase-Shifted Masks", SPIE Microlithography Proceedings, 1991, p. 35.
Todokoro et al, "Transparent Phase Shifting Masks With Multistage Phase Shifter And Comb Shape Shifter", SPIE Microlithography Proceedings, 1991.
Jinbo et al, "Improvement Of Phase-Shifter Edge Line Mask Method", Digests of Papers of 1991 Microprocess Conference, p. 62.

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