Method for forming recess gate of semiconductor device

Details Method for forming recess gate of semiconductor device Method for forming recess gate of semiconductor device

2006-07-04

2006-07-04

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S589000

Reexamination Certificate

active

07071059

ABSTRACT:
A method for forming a recess gate of a semiconductor device is disclosed. The method for forming a recess gate of a semiconductor device comprises forming a polysilicon layer pattern covering a contact region on a semiconductor substrate, etching a predetermined thickness of the semiconductor substrate in the active region using the polysilicon layer pattern as an etching mask to form a recess gate region, and forming and patterning the gate polysilicon layer, the gate conductive layer and the gate hard mask layer to form a recess gate.

REFERENCES:
patent: 6777737 (2004-08-01), Mandelman et al.
patent: 2005/0079661 (2005-04-01), Cho et al.
patent: 2005/0196947 (2005-09-01), Seo et al.
patent: 2005/0199930 (2005-09-01), Seo et al.

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