Method for forming polysilicon by illuminating a laser beam...

Details Method for forming polysilicon by illuminating a laser beam... Method for forming polysilicon by illuminating a laser beam...

2008-01-18

2009-02-10

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S150000, C438S198000, C438S482000, C438S486000, C438S487000, C257SE21562

Reexamination Certificate

active

07488633

ABSTRACT:
A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.

REFERENCES:
patent: 6326286 (2001-12-01), Park et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6573163 (2003-06-01), Voutsas et al.
patent: 2002/0104750 (2002-08-01), Ito
patent: 2000505241 (2000-04-01), None
patent: 2000-306859 (2000-11-01), None
patent: 2003022969 (2003-01-01), None
patent: 1999-023628 (1999-03-01), None
patent: 1020000001170 (2000-01-01), None

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