Method for forming photoresist pattern

Details Method for forming photoresist pattern Method for forming photoresist pattern

1997-03-13

1998-06-02

McPherson, John A.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430296, G03F 736

Patent

active

057597480

ABSTRACT:
A method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with the oxide films serving as a mask. Exposure of the silicon monomer generates protons from the chemically enhanced photoresist film which trigger the polymerization of the silicon monomer. The polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO.sub.2) is formed on the silicon contained polymer.

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patent: 5093224 (1992-03-01), Hashimoto et al.
patent: 5350485 (1994-09-01), Shiraishi et al.
patent: 5439781 (1995-08-01), MacDowell et al.

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