Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-06-29
2010-06-08
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C257SE21249
Reexamination Certificate
active
07732335
ABSTRACT:
A method for forming a semiconductor device includes forming an etch target layer, forming a sacrificial hard mask layer having a metal layer and a carbon-based material layer on the etch target layer, forming a photoresist pattern on the carbon-based material layer, etching the carbon-based material layer by the photoresist pattern until a remaining carbon-based material portion has a predetermined thickness, etching the remaining carbon-based material portion until a corresponding metal layer portion is exposed to form a carbon-based material pattern, and etching the metal layer by using the carbon-based material pattern to form a hard mask pattern for forming the pattern.
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Coburn, Plasma-Assisted Etching, Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-6.
Han Ky-Hyun
Lee Jung-Seock
Blakely & Sokoloff, Taylor & Zafman
Coleman W. David
Hynix / Semiconductor Inc.
McCall-Shepard Sonya D
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