Method for forming pattern

Details Method for forming pattern Method for forming pattern

2007-04-03

2007-04-03

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S157000, C430S166000, C430S270100, C430S313000, C430S316000, C430S317000, C430S330000

Reexamination Certificate

active

11138216

ABSTRACT:
A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

REFERENCES:
patent: 6025117 (2000-02-01), Nakano et al.
patent: 6270948 (2001-08-01), Sato et al.
patent: 6497996 (2002-12-01), Naya et al.
patent: 63-77050 (1988-04-01), None
patent: 4-6563 (1992-01-01), None

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