Method for forming openings in low dielectric constant...

Details Method for forming openings in low dielectric constant... Method for forming openings in low dielectric constant...

2005-12-06

2005-12-06

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S698000, C438S699000, C438S700000, C438S708000, C438S724000

Reexamination Certificate

active

06972259

ABSTRACT:
The invention is directed towards a method for forming openings in low-k dielectric layers and a structure for forming an opening thereof. A mask layer comprising at least one metal hard mask layer and one or more hard mask layers is applied on the dielectric layer for forming the opening.

REFERENCES:
patent: 6323121 (2001-11-01), Liu et al.
patent: 6444557 (2002-09-01), Biolsi et al.

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