Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-04
1999-12-14
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438530, 438533, 438950, H01L 21265, H01L 2128, H01L 2131
Patent
active
060017201
ABSTRACT:
A method for forming ohmic contact has the steps of a) a process for forming an insulating film having a predetermined thickness on a diffusive layer formed on a semiconductor substrate; b) a process for forming a mask on the insulating film; the mask having a small selective ratio with respect to the insulating film and having an opening portion for a contact hole; c) a process for implanting ions into the diffusive layer through the opening portion; d) a process for taking heat treatment to electrically activate the implanted ions; e) a process for completely removing the mask and forming the contact hole by simultaneously etching the mask and the insulating film exposed through the opening portion of the mask; and f) a process for making an electrode come in ohmic contact with the semiconductor substrate exposed from the formed contact hole. In this method, the ohmic contact is formed with high accuracy with respect to a fine contact hole.
REFERENCES:
patent: 5037777 (1991-08-01), Mele et al.
patent: 5061644 (1991-10-01), Yue et al.
patent: 5200635 (1993-04-01), Kaga et al.
patent: 5422308 (1995-06-01), Nicholls et al.
patent: 5449644 (1995-09-01), Hong et al.
patent: 5620926 (1997-04-01), Itoh
Hanaoka Katsunari
Shiota Ikuo
Quach T. N.
Ricoh & Company, Ltd.
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