Method for forming multiple spacer widths

Details Method for forming multiple spacer widths Method for forming multiple spacer widths

2006-03-14

2006-03-14

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S317000, C430S394000, C438S738000, C438S737000

Reexamination Certificate

active

07011929

ABSTRACT:
A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a plurality of gate structures formed overlying a substrate and a plurality of dielectric layers formed substantially conformally overlying the gate structures; exposing a first selected portion of the plurality followed by anisotropically etching through a thickness portion comprising at least the uppermost dielectric layer to form a first sidewall spacer width; exposing a first subsequent selected portion of the plurality followed by etching through at least a thickness portion of the uppermost dielectric layer; and, exposing a second subsequent selected portion of the plurality followed by anisotropically etching through at least a thickness portion of the uppermost dielectric layer to form a subsequent sidewall spacer width.

REFERENCES:
patent: 5935875 (1999-08-01), Lee
patent: 502375 (2002-09-01), None

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