Method for forming multiple or modulated wells of semiconductor

Details Method for forming multiple or modulated wells of semiconductor Method for forming multiple or modulated wells of semiconductor

1997-12-22

2000-01-04

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438208, 438224, 438228, 438232, 438420, 438526, 438529, H01L 218238

Patent

active

060109262

ABSTRACT:
The present invention provide a method for forming a triple well. The triple well includes an n-well, a first p-well surrounded with the n-well and a second p-well apart from the first p-well and adjacent to the n-well. According to the present invention, only one conductivity type of impurities are implanted in each well. Therefore, it is possible to prevent the decrease of the carrier mobility and increase of the leakage current.

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patent: 5501993 (1996-03-01), Borland
patent: 5693505 (1997-12-01), Kobayashi
patent: 5759884 (1998-06-01), Youn

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