Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-08-14
2000-10-17
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, H01L 21336
Patent
active
061330973
ABSTRACT:
A method of forming split gate electrode MOSFET devices comprises the following steps. Form a tunnel oxide layer over a semiconductor substrate. Form a floating gate electrode layer over the tunnel oxide layer. Form a masking cap over the floating gate electrode layer. Pattern gate electrode stacks formed by the tunnel oxide layer and the floating gate electrode layer in the pattern of the masking cap. Pattern source line slots in the center of the gate electrode stacks down to the substrate. Form source regions at the base of the source lines slots. Form intermetal dielectric and control gate layers over the substrate covering the stacks. Pattern the intermetal dielectric and control gate layers into adjacent mirror image split gate electrode pairs. Form self-aligned drain regions.
REFERENCES:
patent: 5103274 (1992-04-01), Tang et al.
patent: 5120671 (1992-06-01), Tang et al.
patent: 5466624 (1995-11-01), Ong et al.
patent: 5651859 (1997-07-01), Chan et al.
patent: 5656513 (1997-08-01), Wang et al.
patent: 5879992 (1999-03-01), Hsieh et al.
patent: 5970371 (1999-10-01), Hsieh et al.
Chen Shui-Hung
Hsieh Chia-Ta
Jung Lin Chrong
Kuo Di-Son
Ackerman Stephen B.
Chaudhari Chandra
Chen Jack
Jones Graham S.
Saile George O.
LandOfFree
Method for forming mirror image split gate flash memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming mirror image split gate flash memory devices , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming mirror image split gate flash memory devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-467990