Method for forming minute pattern and method for forming...

Details Method for forming minute pattern and method for forming... Method for forming minute pattern and method for forming...

2007-04-05

2011-12-27

Norton, Nadine G (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S017000, C216S022000, C216S037000, C216S041000, C216S095000, C216S099000, C438S003000

Reexamination Certificate

active

08083962

ABSTRACT:
A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.

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