Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-10
2007-04-10
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S625000, C438S627000, C438S629000, C438S631000, C438S634000, C438S643000, C438S648000, C438S653000, C438S672000, C438S675000, C438S692000, C438S740000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
11026756
ABSTRACT:
A method for forming a metallic interconnect in a semiconductor device is disclosed. An example method forms an IDL on a substrate including predetermined devices, forms a via hole in the IDL, depositing a first metal diffusion preventive layer and a metal layer to form a via plug on the IDL, and performs a planarization process using the first metal diffusion preventive layer using as an etching stop layer. In addition, the example method forms a metallic interconnect on the first metal diffusion preventive layer, deposits the other metal diffusion preventive layer on the metallic interconnect, and etches a predetermined part of first and second metal diffusion preventive layers and the metallic interconnect using a mask pattern.
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Dongbu Electronics Co. Ltd.
Jr. Carl Whitehead
Mitchell James M.
Saliwanchik Lloyd & Saliwanchik
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