Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-13
2006-06-13
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S649000
Reexamination Certificate
active
07060577
ABSTRACT:
The present invention provides a method for forming a metal silicide layer in an active area of the semiconductor device. The method for forming the metal silicide layer includes: forming a source/drain junction area on a silicon substrate; forming an attack protection layer on the source/drain junction area, wherein the attack protection layer is electrically conductive and prevents a silicon substrate attack caused by chlorine (Cl) gas; forming a titanium (Ti) layer over the attack protection layer through a low pressure chemical vapor deposition (LPCVD) process using a source gas of TiCl4; and diffusing the Ti layer into the attack protection layer to thereby form a metal silicide layer.
REFERENCES:
patent: 5110757 (1992-05-01), Arst et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5843826 (1998-12-01), Hong
patent: 6063703 (2000-05-01), Shinriki et al.
patent: 6087235 (2000-07-01), Yu
patent: 6599841 (2003-07-01), Komada
patent: 2001-068432 (2001-03-01), None
patent: 20000045351 (2000-07-01), None
patent: 20010029842 (2001-04-01), None
Lee In-Haeng
Lee Yoon-Jik
Hynix / Semiconductor Inc.
Kebede Brook
Marshall & Gerstein & Borun LLP
LandOfFree
Method for forming metal silicide layer in active area of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming metal silicide layer in active area of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming metal silicide layer in active area of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3709448