Method for forming metal silicide layer

Details Method for forming metal silicide layer Method for forming metal silicide layer

2007-02-09

2009-06-30

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000, C438S655000, C438S664000, C438S682000, C257SE21165, C257SE21507, C257SE23017, C257SE23019

Reexamination Certificate

active

07553762

ABSTRACT:
The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.

REFERENCES:
patent: 4737839 (1988-04-01), Burt
patent: 6440851 (2002-08-01), Agnello et al.
patent: 2004/0262649 (2004-12-01), Chang et al.
patent: 2005/0202673 (2005-09-01), Chi et al.
patent: 2006/0051961 (2006-03-01), Cabral et al.
patent: 2006/0057844 (2006-03-01), Domenicucci et al.

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