Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-07-26
2005-07-26
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S595000
Reexamination Certificate
active
06921711
ABSTRACT:
A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.
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Cabral, Jr. Cyril
Jamison Paul C.
Ku Victor
Li Ying
Narayanan Vijay
Bilak Mark R.
Neff Daryl K.
Smoot Stephen W.
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