Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-12-06
2000-10-24
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438649, 438656, 438672, H01L 214763
Patent
active
061366927
ABSTRACT:
In a semiconductor device, a TiN plug is formed to filled up a contact hole which is formed to penetrate through an insulator film on a conductive silicon layer in a surface region of a silicon substrate. A first titanium silicide film is formed on a bottom surface of the TiN plug, so that the TiN plug is electrically connected to the conductive silicon layer through the first titanium silicide film. A second titanium silicide film is formed on a top surface of the TiN plug, and a polysilicon electrode is formed on the second titanium silicide film, so that the TiN plug is electrically connected to the polysilicon electrode through the second titanium silicide film. Thus, the contact resistance between the TiN plug and the polysilicon electrode is reduced.
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Lee et al., "Simultaneously Formed Storage Node Contact and Metla Contact Cell . . . " IEEE IEDM Tech. Digest, Dec. 19996, pp. 583-596, Dec. 1996.
Raaijmakers, L., et al., "Contact Hole Fill with Low Temperature LPCVD TiN", VMIC Conference, Jun. 12-13, 1990, pp. 219-225.
NEC Corporation
Quach T. N.
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